Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1991-06-28
1993-04-20
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257140, H01L 2974, H01L 2702
Patent
active
052045412
ABSTRACT:
One embodiment of the present invention is a gated thyristor formed at a face of semiconductor layer of a first conductivity type, comprising: a first well formed at the face to be of a second conductivity type opposite the first conductivity type; a second well of a first conductivity type formed at the face to be enclosed by the first well; an emitter region of the second conductivity type formed at the face to be enclosed by the second well; first and second highly doped regions formed at the face to be of the first conductivity type, the first highly doped region formed within the first well and the second highly doped region formed in the first well and at least partially within the second well, a subregion of the first well spacing apart the first and second highly doped regions and operable to act as a base of a first bipolar transistor; third, fourth and fifth highly doped regions formed at the face to be of the second conductivity type, the third and fourth highly doped regions spaced from the first well, the fifth highly doped region formed to be at least partially within the first well, channel regions of the semiconductor layer spacing apart the third region from the fourth region and the fourth region from the fifth region, the third region and the fifth region spaced apart, conductive gates insulatively disposed over the channel regions; and said third region conductively connected to the second highly doped region, the fourth region conductively connected to the emitter region.
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Smayling Michael C.
Soobik Lembit
Donaldson Richard L.
Hiller William
Holland Robby T.
Jackson, Jr. Jerome
Texas Instruments Incorporated
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