Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-08-15
1999-10-05
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 30, 257 37, 257 38, 257 39, 257197, H01L 2906, H01L 310328
Patent
active
059628642
ABSTRACT:
A semiconductor device comprises mutually separated first and third barrier layers interposed between the first and second patterned terminals. The device operates by the resonant tunneling of carriers from the second terminal to the first terminal. The first terminal is patterned into a section and a plurality of layers comprising the mutually separated first and second barrier layers are formed on top of the first terminal. A second terminal is then formed on top of the plurality of semiconductor layers. The second terminal is then patterned so that it only overlies the first terminal in confined region. A front-gate is then formed on top of the patterned second terminal.
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Leadbeater Mark L.
Patel Nalin K.
Kabushiki Kaisha Toshiba
Tran Minh Loan
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