Gated nanorod field emitter structures and associated...

Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...

Reexamination Certificate

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C313S311000, C313S336000, C313S351000, C313S495000, C445S024000, C438S020000

Reexamination Certificate

active

07411341

ABSTRACT:
The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

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