Gated isolation structure for imagers

Details Gated isolation structure for imagers Gated isolation structure for imagers

2007-12-04

2007-12-04

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S060000, C438S145000, C438S218000

Reexamination Certificate

active

10771290

ABSTRACT:
Isolation methods and devices for isolating pixels of an image sensor pixel. The isolation structure and methods include forming a biased gate over a field isolation region and adjacent a pixel of an image sensor. The isolation methods also include forming an isolation gate over substantial portions of a field isolation region to isolate pixels in an array of pixels.

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