Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2005-02-22
2005-02-22
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Electron emitter manufacture
C445S024000, C445S050000
Reexamination Certificate
active
06858455
ABSTRACT:
Gated field emission devices and systems and methods for their fabrication are described. A method includes growing a substantially vertically aligned carbon nanostructure, the substantially vertically aligned carbon nanostructure coupled to a substrate; covering at least a portion of the substantially vertically aligned carbon nanostructure with a dielectric; forming a gate, the gate coupled to the dielectric; and releasing the substantially vertically aligned carbon nanostructure by forming an aperture in the gate and removing a portion of the dielectric.
REFERENCES:
patent: 5986388 (1999-11-01), Makishima
patent: 6440763 (2002-08-01), Hsu
patent: 6472802 (2002-10-01), Choi et al.
patent: 6692324 (2004-02-01), Simpson et al.
Ren et al., “Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot”, Applied Physics Letters, vol. 75, No. 8, Aug. 23, 1999, pp. 1086-1088.*
Merkulov et al., “Patterned growth of individual and multiple vertically aligned carbon nanofibers”, Applied Physics Letters, vol. 76, No. 24, Jun. 12, 2000, pp. 3555-3557.*
Guillorn, et al., “Operation of a gated field emitter using an individual carbon nanofiber cathode,” Applied Physics Letters, vol. 79, No. 21, pp. 3506-3508, Nov. 19, 2001.
Baylor, et al., “Field emission from isolated individual vertically aligned carbon nanocones” Journal of Applied Physics, vol. 91, No. 7, pp. 4602-4606, Apr. 1, 2002.
Yahachi et al., “Field Emission Patterns from Single-Walled Carbon Nanotubes,” Japan Journal Applied Physics, vol. 36, pp. 1340-1342, Oct. 1, 1997.
Matsumoto, et al., “Ultralow biased field emitter using single-wall carbon nanotube directly grown onto silicon tip by thermal chemical vapor deposition,” Applied Physics Letters, vol. 78, No. 4, pp. 539-540, Jan. 22, 2001.
Guillorn, et al., “Fabrication of gated cathode structures using an in situ grown vertically aligned carbon nanofiber as a field emission element ”, Journal of Vacuum Science, pp. 573-578, Mar./Apr. 2001.
Rinzler, et al., “Unraveling Nanotubes: Field Emission from an Atomic Wire” available at wwww.jstor.org, pp. 1550-1553, May 9, 2002.
Merkulov, et al., “Patterned growth of individual and multiple vertically aligned carbon nanofibers,” Applied Physics Letters, vol. 76, No. 24, pp. 3555-3557, Jun. 12, 2000.
Xueping, et al., “A method for fabricating large-area, patterned, carbon nanotube field emitters,” Applied Physics Letters, vol. 74, No. 17, pp. 2549-2551, Apr. 26, 1999.
Merkulov, et al., “Scanned-probe field-emission studies of vertically aligned carbon nanofibers” Journal of Applied Physics, vol. 89, No. 3, pp. 1933-1937, Feb. 1, 2001.
Bonard, et all, “Field emission from single-wall carbon nanotube films” Applied Physics Letters, vol. 73, No. 7, pp. 918-920, Aug. 17, 1998.
Xueping, et al., “Carbon Nanotube-based vacuum microelectronic gated cathode,”Material Research Society Symposium, vol. 509, pp. 107-109, 1998.
Dean, et al., “The environmental stability of field emission from single-walled carbon nanotubes” Applied Physics Letters, vol. 75, No. 19, pp. 3017-3019, Nov. 8, 1999.
Wang, et al., “Flat panel display prototype using gated carbon nanotube field emitters,” Applied Physics Letters, vol. 78, No. 9, pp. 1294-1296, Feb. 26, 2001.
Lee, et al., “Realization of Gated Field Emitters for Electrophotonic Applications Using Carbon Nanotube Line Emitters Directly Grown into Submicrometer Holes,” Advanced Materials Communications, vol. 13, No. 7, pp. 479-482, Apr. 4, 2001.
Guillorn, et al. “Microfabricated field emission devices using carbon nanofibers as cathode elements”, Journal of Vaccuum Science Technology B19(6), pp. 2598-2601, Nov./Dec. 2001.
Guillom Michael A.
Lowndes Douglas H.
Melechko Anatoli V.
Merkulov Vladimir I.
Simpson Michael L.
Booth Richard A.
Bruckner, P.C. John
UT-Battelle LLC
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