Gated electron emitter having supported gate

Details Gated electron emitter having supported gate Gated electron emitter having supported gate

2006-11-28

2006-11-28

Guharay, Karabi (Department: 2879)

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

C445S051000, C313S309000, C313S310000, C313S497000

Reexamination Certificate

active

07140942

ABSTRACT:
A field emission device having emitter tips and a support layer for a gate electrode is provided. Openings in the support layer and the gate layer are sized to provide mechanical support for the gate electrode. Cavities may be formed and mechanically supported by walls between cavities or columns within a cavity. Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those used in conventional semiconductor device manufacturing.

REFERENCES:
patent: 4307507 (1981-12-01), Gray et al.
patent: 4964946 (1990-10-01), Gray et al.
patent: 6066507 (2000-05-01), Rolfson et al.
patent: 6514422 (2003-02-01), Huang et al.

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