Gated diode overvoltage protection

Details Gated diode overvoltage protection Gated diode overvoltage protection

2005-05-24

2005-05-24

Leja, Ronald (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

Reexamination Certificate

active

06898060

ABSTRACT:
Disclosed herein is a gated diode overvoltage protection circuit. In one embodiment, the circuit includes: a terminal, a gated diode, and a bias circuit. The terminal is configured to convey a voltage signal. The gated diode has an anode, a cathode, and a gate. The gated diode is coupled between the terminal and a predetermined voltage node so as to enter a forward conduction mode during electrostatic discharge (ESD) events, overvoltage conditions, or transient signal excursions. The bias circuit is configured to establish a low-resistance path between the cathode and gate when the gated diode is in a forward conduction mode, and to eliminate the low-resistance path when the gated diode is not in the forward conduction mode.

REFERENCES:
patent: 4989057 (1991-01-01), Lu
patent: 6226409 (2001-05-01), Cham et al.
patent: 6314204 (2001-11-01), Cham et al.
patent: 6380570 (2002-04-01), Voldman
patent: 6762918 (2004-07-01), Voldman

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