Gated diode nonvolatile memory operation

Details Gated diode nonvolatile memory operation Gated diode nonvolatile memory operation

2007-01-02

2009-02-17

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185050, C365S185140

Reexamination Certificate

active

07492638

ABSTRACT:
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

REFERENCES:
patent: 5814853 (1998-09-01), Chen
patent: 6160286 (2000-12-01), Chi et al.
patent: 6690601 (2004-02-01), Yeh et al.
patent: 7072219 (2006-07-01), Yeh et al.
patent: 7269062 (2007-09-01), Liao et al.
patent: 7272038 (2007-09-01), Liao et al.
patent: 2007/0132292 (2007-06-01), Robertson

Affiliated with

Also associated with

Rating

Gated diode nonvolatile memory operation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gated diode nonvolatile memory operation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gated diode nonvolatile memory operation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4072776