Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-01-16
2007-01-16
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S264000, C257SE29243
Reexamination Certificate
active
10995566
ABSTRACT:
A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.
REFERENCES:
patent: 6853006 (2005-02-01), Kataoka et al.
patent: 7005678 (2006-02-01), Kumar et al.
patent: 2003-068761 (2003-03-01), None
patent: A-2003-68761 (2003-03-01), None
patent: A-2003-188380 (2003-07-01), None
Jeremy Suhail Rashid
Kataoka Mitsuhiro
Kumar Rajesh
Mihaila Andrei
Takeuchi Yuichi
Arena Andrew O.
Denso Corporation
Lee Eddie
Posz Law Group , PLC
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