Gate voltage modulation for transistor fault conditions

Details Gate voltage modulation for transistor fault conditions Gate voltage modulation for transistor fault conditions

1995-12-04

1997-11-18

Nguyen, Matthew V.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

363 56, H02H 900

Patent

active

056893949

ABSTRACT:
A power device control system includes a power device having an input gate and first and second output terminals, a controller, and a gate driver for supplying current to the input gate of the power device, comparing a voltage difference between the first and second output terminals, and providing a comparator signal to the controller if the voltage difference is greater than or equal to a predetermined maximum voltage difference. The controller is capable of providing a command signal to the gate driver and pulse width modulating the command signal upon receiving a comparator signal from the gate driver to gradually switch off the power device. The control system can further include a current sensor coupled between one of the first and second output terminals and the controller for supplying a current signal and an integrated current signal to the controller. The control system can be capable of variably pulse width modulating the command signal, and, in one embodiment, the modulation process includes varying on/off switching of the command signal to increase a percentage of off time during subsequent periods of modulation.

REFERENCES:
patent: Re34107 (1992-10-01), Wirth
patent: 4745513 (1988-05-01), McMurray
patent: 5444591 (1995-08-01), Chokhawala et al.
patent: 5485341 (1996-01-01), Okado et al.

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