Gate unit for a hard-driven GTO

Details Gate unit for a hard-driven GTO Gate unit for a hard-driven GTO

1998-03-05

2000-06-06

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257107, 257723, 257731, 257732, 361717, 361719, H01L 29744, H01L 2941, H01L 2334

Patent

active

060722002

ABSTRACT:
In a gate unit (47) for a hard-driven GTO (10), at least some of the electronic components (37, . . , 42) needed for driving are arranged on a printed circuit board (34). The printed circuit board (34) encloses the GTO (10), in order to achieve low-inductance contact, in a plane lying between the anode side and the cathode side of the GTO (10) parallel to the semiconductor substrate (17) of the GTO (10) and is directly connected to the cathode contact (14) and the gate connection (22) of the GTO (10). A compact structure with, at the same time, improved mechanical stability is achieved in such a gate unit in that the components (37, . . , 42) are arranged on the printed circuit board (34) around the GTO (10), in the immediate vicinity of the GTO (10).

REFERENCES:
patent: 3708732 (1973-01-01), Faust
patent: 4477970 (1984-10-01), Alexander et al.
patent: 5512790 (1996-04-01), Lachenmaier
Article entitled: "Serienschaltung Von GTO-Thyristoren Fur Frequenzumrichter Hoher Leistung"; ABB Technik May 1996; pp. 14-20.
Serienschaltung von GTO-Thyristoren fur Frequenzumrichter hoher Leistung, ABB Technik, Nr. 5, 1996, Seiten 14-20.

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