Gate turnoff thyristor with reduced gate trigger current

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257138, 257147, 257149, 257154, H01L 2974, H01L 31111

Patent

active

055742971

ABSTRACT:
In order to compatibly implement improvement in withstand voltage and ON-state resistance as well as reduction in turnon loss and improvement in di/dt resistance, an n buffer layer (12) is locally exposed on a lower surface of a semiconductor substrate (160), while a polysilicon additional resistive layer (104) is formed to cover the exposed surface. An anode electrode (101) covering the lower surface of the semiconductor substrate (160) is connected to a p emitter layer (11) and the additional resistive layer (104). Thus, the n buffer layer (12) and the anode electrode (101) are connected with each other through the additional resistive layer (104), whereby a gate trigger current is reduced. Thus, turnon loss is reduced and di/dt resistance is increased. At the same time, the withstand voltage and the ON-state resistance are excellent due to provision of the n buffer layer (12). Thus, the turnon loss is reduced and the di/dt resistance is improved without deteriorating the withstand voltage and the ON-state resistance.

REFERENCES:
patent: 5028974 (1991-07-01), Kitagawa et al.
patent: 5146305 (1992-09-01), Bernier
patent: 5459338 (1995-01-01), Takayanagi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Gate turnoff thyristor with reduced gate trigger current does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate turnoff thyristor with reduced gate trigger current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate turnoff thyristor with reduced gate trigger current will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-564859

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.