Gate turn-off type thyristor with separate semiconductor resisti

Details Gate turn-off type thyristor with separate semiconductor resisti Gate turn-off type thyristor with separate semiconductor resisti

1978-02-08

1978-11-28

Clawson, Jr., Joseph E.

357 36, 357 51, 357 65, 357 71, 357 79, H01L 2974

Patent

active

041278631

ABSTRACT:
A gate turn-off type thyristor comprises a semiconductor body having four sequentially contiguous layers, adjacent two of which are of opposite type conductivity and form a PN junction therebetween, one outer layer constituting a cathode layer of said body being divided into a plurality of mutually independent layer portions; and first and second electrodes packing said semiconductor material body. Between the cathode layer and the electrode is disposed a semiconductor wafer formed with high impurity concentration surface layers for permitting the wafer to ohmically contact with said cathode layer and said electrode, respectively.

REFERENCES:
patent: 3460007 (1969-08-01), Scott
patent: 3462658 (1969-08-01), Worchel et al.
patent: 3504239 (1970-03-01), Johnson et al.
patent: 3532941 (1970-10-01), Boyer
patent: 3611072 (1971-10-01), Hamilton
patent: 3667008 (1972-05-01), Katnack
patent: 3858096 (1974-12-01), Kuhrt et al.

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