Gate turn-off triac with dual low conductivity regions contactin

Details Gate turn-off triac with dual low conductivity regions contactin Gate turn-off triac with dual low conductivity regions contactin

1977-11-07

1980-07-22

Clawson, Jr., Joseph E.

357 56, 357 86, 357 90, H01L 29747

Patent

active

042142555

ABSTRACT:
A semiconductor triac comprises means for switching the device from a conducting state to a blocking state. The means can be characterized as being a gate region which is substantially aligned with each of two anode regions. Each of the anode regions is adjacent a different one of two major opposing surfaces and are substantially misaligned with respect to each other.

REFERENCES:
patent: 3437889 (1969-04-01), Eubster
patent: 3443171 (1969-05-01), Knott et al.
patent: 3476993 (1969-11-01), Aldrich et al.
patent: 3538401 (1970-11-01), Chu
patent: 3914780 (1975-10-01), Marek
patent: 3996601 (1976-12-01), Hutson
patent: 4063277 (1977-12-01), Gooen
patent: 4110781 (1978-08-01), Konishi et al.
patent: 4127863 (1978-11-01), Kurata
G.E. SCR Manual, Fifth Edition, 1972, G.E., Syracuse, _N.Y., 13201, p. 4.

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