Gate turn-off thyristor with switching control field effect tran

Details Gate turn-off thyristor with switching control field effect tran Gate turn-off thyristor with switching control field effect tran

1989-01-30

1990-10-16

Hille, Rolf

357 39, 357 234, 357 2314, H01L 2974

Patent

active

049639722

ABSTRACT:
A gate turn-off thyristor is disclosed which includes a first emitter layer of a first type conductivity, a first base layer of a second type conductivity electrically connected to the first emitter layer, a second base layer of the first type conductivity formed in the surface of the first base layer, a second emitter layer of the second type conductivity formed in the second base layer, and a gate electrode insulatively provided to cover a portion of the second base layer positioned between the second emitter layer and the first base layer and having an elongated planar shape. A control electrode is electrically connected to the second base layer and turns off the thyristor in response to a turn-off controlling voltage signal externally supplied thereto. The control electrode comprises a first electrode portion insulatively provided above the gate electrode and having an elongated planar shape and a second electrode portion for electrically connecting the first electrode portion with the second base layer, and having a mesh-like planar pattern as a whole.

REFERENCES:
patent: 4292646 (1981-09-01), Assour et al.
patent: 4635086 (1987-01-06), Miwa et al.
patent: 4748492 (1988-05-01), Iwase et al.
patent: 4760431 (1988-07-01), Nakagawa et al.
IEEE Transactions on Electron Devices, vol. ED-34, No. 2, 2/87, "Safe Operating Area for 1200-V Nonlatchup Bipolar-mode MOSFET", by Nakagawa et al.
IEEE Transactions on Electron Devices, vol. ED-32, No. 3, Mar. 1985, pp. 594-598, S. Hachad, C. Cros, D. Darees, J. J. Dorkel, and P. Leturcq.

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