Gate turn-off thyristor with stop layer

Details Gate turn-off thyristor with stop layer Gate turn-off thyristor with stop layer

1998-07-30

2000-08-22

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257147, 257149, H01L 29744

Patent

active

061076511

ABSTRACT:
In a gate turn-off thyristor (GTO) with homogeneous anode, emitter and stop layer, a device which short-circuit the stop layer with the anode is provided in an edge termination region. As a result, in a reverse-biased state, the GTO has a structure of a diode in the edge region and amplification of a reverse current is obviated. With this structure, thermal loading in the edge region is reduced, as the GTO tolerates a higher operating temperature at a predetermined voltage.

REFERENCES:
patent: 5028974 (1991-07-01), Kitagawa

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