Gate turn-off thyristor with resistance layers

Details Gate turn-off thyristor with resistance layers Gate turn-off thyristor with resistance layers

1989-07-20

1991-04-23

Mintel, William

357 51, 357 56, 357 68, 357 37, H01L 2974, H01L 2702, H01L 2906, H01L 2952

Patent

active

050103849

ABSTRACT:
In a gate turn-off thyristor having a plurality of gate turn-off thyristor segments, each having a four-layer upon pnpn structure, a resistance layer is interposed between the emitter layer and the cathode electrode of each segment. A voltage drop occurs across the resistance layer and this voltage drop prevents a current concentration to a specific segment especially at the last stage of a turn-off process, so that the current flows in the respective remaining segments is improved. The voltage drop has a function of shunting the anode current so that the shunted current flows into the gate. Accordingly, the currents flowing through the respective segments and the turn-off times of the respective segments are intended to be made uniform. Therefore, the controllable on-state current can be considerably increased.

REFERENCES:
patent: 4127863 (1978-08-01), Kurata
patent: 4411708 (1983-10-01), Winhan
patent: 4516149 (1985-05-01), Wakui et al.
patent: 4618781 (1986-10-01), Silber et al.
patent: 4786959 (1988-11-01), Shimizu et al.

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