Gate turn-off thyristor with integral capacitive anode

Details Gate turn-off thyristor with integral capacitive anode Gate turn-off thyristor with integral capacitive anode

1985-03-07

1987-07-21

Clawson, Jr., Joseph E.

357 51, 357 55, 357 58, H01L 2974

Patent

active

046821988

ABSTRACT:
A gate turn-off thyristor is provided having a semiconductor substrate, an anode electrode, a cathode electrode and a gate electrode. The semiconductor substrate includes a P emitter layer connected to the anode electrode, an N base layer adjacent to the P emitter layer, a P base layer adjacent to the N base layer and connected to a gate electrode, and an N emitter layer adjacent to the P base layer and connected to the cathode electrode. In order to improve in its current cut-off performance, the semiconductor substrate further includes a P-type layer provided between the P emitter layer and the N base layer and having the impurity concentration lower than that of the N base layer.

REFERENCES:
patent: 3855611 (1974-12-01), Neilson et al.
patent: 4146906 (1979-03-01), Miyata et al.
patent: 4219832 (1980-08-01), Naito et al.
patent: 4292646 (1981-09-01), Assour et al.
patent: 4517582 (1985-05-01), Sittig

Affiliated with

Also associated with

Rating

Gate turn-off thyristor with integral capacitive anode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate turn-off thyristor with integral capacitive anode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate turn-off thyristor with integral capacitive anode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-210795