Gate turn-off thyristor with a cathode base layer having four di

Details Gate turn-off thyristor with a cathode base layer having four di Gate turn-off thyristor with a cathode base layer having four di

1983-07-19

1986-03-04

Clawson, Jr., Joseph E.

357 89, 357 20, 357 13, H01L 2974

Patent

active

045742960

ABSTRACT:
A PNPN layer type gate turn-off thyristor including a first gate and a second gate comprises, in particular, a second P-type layer such that the impurity atom concentration at the auxiliary thyristor portion is lower than that at the main thyristor portion. Since the first gate disposed at the auxiliary thyristor portion is first fired and then the main thyristor portion is turned on, the above-mentioned impurity atom concentration profile is effective for reducing both the turn-on time and the turn-off time, that is, improving the di/dt capability of the thyristor.

REFERENCES:
patent: 4177478 (1979-12-01), Senes
patent: 4291325 (1981-09-01), Sueoka et al.
patent: 4315274 (1982-02-01), Fukui et al.
Azuma et al., "2500-V600-A Gate Turn-Off Thyristor (GTO)", IEEE Transactions on Electron Devices, vol. Ed-28, No. 3, Mar., 1981.

Affiliated with

Also associated with

Rating

Gate turn-off thyristor with a cathode base layer having four di does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate turn-off thyristor with a cathode base layer having four di, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate turn-off thyristor with a cathode base layer having four di will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1596356