Gate turn-off thyristor stack

Details Gate turn-off thyristor stack Gate turn-off thyristor stack

1982-07-08

1985-01-08

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 79, 357 82, 307252C, 307252T, H01L 2332, H01L 2342, H01L 2504, H03K 1760

Patent

active

044929757

ABSTRACT:
A GTO thyristor stack comprises a pair of GTO thyristors in parallel connection and a pair of diodes in anti-parallel connection therewith. The elements in one of the GTO thyristor pair and the diode pair are located in the middle of the stack structure and sandwiched by the elements in the other with all the elements stacked in electrical connection. The stack structure is clamped by a pair of clamper members.

REFERENCES:
patent: 3447118 (1969-05-01), Ferree
patent: 3471757 (1969-10-01), Sias
patent: 3496445 (1970-02-01), Boksjo et al.
patent: 3584287 (1971-06-01), Binoche
patent: 3753052 (1973-08-01), Rosser
patent: 4177479 (1979-12-01), DeBruyne et al.
patent: 4203040 (1980-05-01), Abbondanti et al.

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