Gate turn-off thyristor of multi-emitter type

Details Gate turn-off thyristor of multi-emitter type Gate turn-off thyristor of multi-emitter type

1989-07-27

1991-09-24

James, Andrew J.

357 20, 357 36, 357 37, 357 40, 357 68, H01L 2974, H01L 2900, H01L 2972

Patent

active

050518062

ABSTRACT:
A gate turn-off (GTO) thyristor has a plurality of unit GTO thyristors of strip-like configuration in a same semiconductor substrate, each unit GTO thyristor being constructed of an N emitter layer, P base layer, N base layer and P emitter layer. The P base and N base layers are shared in common for all the unit GTO thyristors which are formed in a multi-ring configuration. The exposed area of the P emitter layer of a unit GTO thyristor located far from the gate signal input area is made smaller than that of the P emitter layer of a unit GTO thyristor located relatively close to the gate signal input area.

REFERENCES:
patent: 4868625 (1989-09-01), Ujihara et al.

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