Gate turn-off thyristor of multi-emitter type

Details Gate turn-off thyristor of multi-emitter type Gate turn-off thyristor of multi-emitter type

1987-07-08

1989-09-19

James, Andrew J.

357 20, 357 36, 357 37, 357 40, 357 68, H01L 2974, H01L 2906, H01L 2972

Patent

active

048686255

ABSTRACT:
A gate turn-off (GTO) thyristor has a plurality of unit GTO thyristors of strip-like configuration in a same semiconductor substrate, each unit GTO thyristor being constructed of an N emitter layer, P base layer, N base layer and P emitter layer. The P base and N base layers are shared in common for all the unit GTO thyristors which are formed in a multi-ring configuration. The exposed area of the P emitter layer of a unit GTO thyristor located far from the gate signal input area is made smaller than that of the P emitter layer of a unit GTO thyristor located relatively closer to the gate signal input area.

REFERENCES:
patent: 3971065 (1976-07-01), Matsushita et al.
patent: 4003072 (1977-01-01), Matsushita et al.
patent: 4443810 (1984-04-01), Yatsuo et al.
patent: 4500903 (1985-02-01), Yatsuo et al.
patent: 4691223 (1987-09-01), Murakami et al.

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