Gate turn-off thyristor for high blocking voltage and small comp

Details Gate turn-off thyristor for high blocking voltage and small comp Gate turn-off thyristor for high blocking voltage and small comp

1995-06-27

1998-01-20

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257149, 257152, 257153, 257163, 257172, H01L 2974, H01L 31111

Patent

active

057104450

ABSTRACT:
A GTO is specified which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode emitter (6) is designed as a transparent emitter and has anode short-circuits (10). By virtue of the combination of the barrier layer, the transparent anode emitter and the anode short-circuits, a GTO is obtained which can be operated at high switching frequencies, the substrate thickness of which can be reduced and which nevertheless exhibits no increase in the switching losses.

REFERENCES:
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patent: 4742382 (1988-05-01), Jaecklin
patent: 5001535 (1991-03-01), Nishizawa et al.
patent: 5017992 (1991-05-01), Roggwiller
patent: 5028974 (1991-07-01), Kitagawa et al.
patent: 5491351 (1996-02-01), Bauer et al.
Japanese Patent Abstract of JP 1-165169 A., E-826, Sep. 29, 1989, vol. 13, No. 437 (Cited in Search Report).
Japanese Patent Abstract of JP 1-171272 A; E-829, Oct. 6, 1989, vol. 13, No. 445 (Cited in Search Report).
Mitsuru et al; 8000-V 1000-A Gate Turn-Off Thyristor with Low On State Voltage and Low Switching Loss; IEEE Transactions on Power Electronics, vol. 5, No. 4, Oct. 1990, pp. 430-435 (Cited in Search Report).
Tsuneo et al.; 6000-V Gate Turn-Off Thyristors (GTO's) with n-Buffer and New Anode Short Structure; IEEE Transactions on Electron Devices, vol. 38, No. 6, Jun. 1991, pp. 1491-1496 (Cited in Search Report).
IEEE Transactions on Electron Devices, vol. ED-26, No. 6, Jun. 1979, Shibib et al., pp. 959-965, "Heavily Doped Transparent-Emitter Regions in Junction Solar Cells, Diodes, and Transistors" (Discussed in Specification).

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