Patent
1988-04-04
1990-03-20
Clawson, Jr., Joseph E.
357 56, 357 86, 357 89, 357 90, H01L 2974
Patent
active
049105736
ABSTRACT:
A gate turn-off thyristor (GTO) having a semi-conductor substrate (1) with at least one p-conducting anode layer (4), one n-type base layer (6), one p-type base layer (7) which is in electrical contact with a gate, and one n-conducting cathode layer (8) has a cathode layer (8) with a highly doped zone (10) acting as n.sup.+ emitter and a lightly doped zone (9). The highly doped zone (10) adjoins the surface of the semi-conductor substrate (1) and has a doping density which is at least an order of magnitude higher than that of the p-type base layer (7). The lightly doped zone (9) is situated between a pn junction J.sub.1, produced by the p-type base layer (7) and the cathode layer (8), and the highly doped zone (10) of the cathode layer (8). In a preferred embodiment of the invention, the highly doped zone (10) is so structured that the lightly doped zone (9) extends, in a GTO with mesa structure, from the pn junction J.sub.1 to the surface of the semi-conductor substrate (1) in a central strip (5) of the cathode fingers (2). A method for producing GTO's according to the invention is furthermore specified.
REFERENCES:
patent: 4742382 (1988-05-01), Jaecklin
patent: 4757025 (1988-07-01), Bender
M. Azuma et al., "An Ode Current Limiting Effect of High Power GTOs," IEEE Elec. Dev. Lett., vol. EDL-1, #10, Oct., 1980, pp. 203-205.
BBC Brown Boveri AG
Clawson Jr. Joseph E.
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