Gate turn-off thyristor

Details Gate turn-off thyristor Gate turn-off thyristor

1987-08-07

1988-12-20

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307604, 307571, H01L 2974, H03K 513, H03K 1760

Patent

active

047928387

ABSTRACT:
In a gate turn-off thyristor including two separate gate electrodes, a first turn-off gate signal is applied to the first gate electrode and then a second turn-off gate signal is applied to the second gate electrode after a predetermined time has elapsed in order to improve the controllable anode current and to improve the capability against an anode-voltage rising rate. This is because the flow distribution of the anode current is unbalanced asymmetrical with respect to the structural center of the GTO and therefore the internal resistance between the cathode K and the second gate G.sub.2 is reduced, so that it is possible to increase the magnitude of the turn-off gate current near the time when the anode current drops sharply or at the end of the GTO switching off operation.

REFERENCES:
patent: 4092703 (1978-05-01), Sueoka et al.
patent: 4345266 (1982-08-01), Owyang

Affiliated with

Also associated with

Rating

Gate turn-off thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate turn-off thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate turn-off thyristor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1912257