Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-06-15
1996-09-10
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257147, 257150, 257166, H01L 2974, H01L 31111
Patent
active
055548636
ABSTRACT:
A gate turn-off thyristor including: an n-type emitter semiconductor layer divided into a plurality of n-type areas; a p-type base semiconductor layer which cooperates with the n-type emitter semiconductor layer to form a first main circular surface; an n-type base semiconductor layer; and a p-type emitter semiconductor layer cooperating with the n-type base semiconductor layer to form a second main circular surface. An outer diameter of the p-type emitter semiconductor layer is smaller than that of the n-type emitter semiconductor layer. A first main electrode put in low resistance contact with the n-type emitter semiconductor layer is formed on the first main surface. A second main electrode put in low resistance contact with the p-type emitter layer and the n-type base semiconductor layer is formed on the second main surface. A control electrode is formed in the p-type base semiconductor on the first main surface. A first electrode plate larger in diameter than the n-type emitter semiconductor layer is connected electrically with the first main electrode. A second electrode plate larger in diameter than the n-type emitter semiconductor layer is connected electrically with the second main electrode.
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Research Disclosure, No. 295, Nov. 1988, "GTO Thyristor", pp. 879-880.
Komuro Hitoshi
Kouzuchi Sigeyasu
Saitoh Takashi
Sakurada Shuroku
Hitachi , Ltd.
Hitachi Haramachi Electronics Co., Ltd.
Ngo Ngan V.
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