Gate turn-off thyristor

Details Gate turn-off thyristor Gate turn-off thyristor

1989-03-20

1991-06-04

Hille, Rolf

357 39, H01L 2974

Patent

active

050218557

ABSTRACT:
A gate turn-off thyristor includes a cathode emitter of n-type, a cathode base of p-type, an anode base of n-type and an anode emitter of p-type. A gate electrode is electrically connected to the p cathode base to enclose and define an elemental gate turn-off thyristor region. A plurality of n cathode emitter regions are arranged in proximity to each other in the elemental gate turn-off thyristor region. A highly-doped buried gate region is provided in the p cathode base with the substantially identical configuration for each n cathode emitter regions.

REFERENCES:
patent: 4086611 (1978-04-01), Nishizawa et al.
patent: 4171995 (1979-10-01), Nishizawa et al.
patent: 4198645 (1980-04-01), Nishizawa et al.
patent: 4231059 (1980-10-01), Hower et al.
patent: 4581626 (1986-04-01), Krishna et al.
". . . GTO . . . ", (authors unknown), EOD-85-55, SPC-85-66, pp. 65-71, Aug. 26, 1985 (Japan).

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