Gate turn-off thyristor

Details Gate turn-off thyristor Gate turn-off thyristor

1994-10-27

1996-02-13

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257163, 257172, H01L 2974, H01L 2950, H01L 2960

Patent

active

054913519

ABSTRACT:
A GTO having a cathode emitter (7) is specified, which cathode emitter has a low emission efficiency. This cathode emitter (7) provides a clearly increased resistance to the formation of current filaments. As a result, relatively high turn-off current densities can be reliably mastered. In addition, the fraction of the hole current in the total current is more than 10%. This is achieved, for example, by selecting the penetration depth as <1 .mu.m and the edge concentration as <10.sup.19 cm.sup.-3.

REFERENCES:
Burkhard, J. D., "Copper Wirebond Barrier Metallization", In Motorola Inc. Technical Developments, Dec. 1991, vol. 14, S. 124.
Tsutomu Yatsuo, et al, "Ultrahigh-Voltage High-Current Gate Turn-Off Thyristors", In IEEE Trans. Electron Devices, vol. ED-31, Dec. 1984, S. 1681-1686.
Nakoto Azuma, et al, GTO Thyristors, In Proceedings of the IEEE, vol. 76, No. 4, Apr. 1988, S.419-427.
Towner, J. M. "The Importance of the Short-Circuit Failure Mode in Aluminum Electromigration", In J. Vac. Sic. Technol. B, Nov./Dec. 1987, S. 1696-1700; S. 1696; li.Sp., 2. Abs., S. 1697, li. Sp., 2 Abs.
Chin-An Chang, "Reaction Between Cu and Ptsi with Cr, Ti, W, and C Barrier Layers", In Appl. Phys. 67, 15 May, 1990, S. 6184-6188.

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