Patent
1989-03-06
1990-08-28
Clawson, Joseph E.
357 38, 357 56, 357 43, 357 34, H01L 2980
Patent
active
049529900
ABSTRACT:
In a gate turn-off power semiconductor component in the form of a field-controlled thyristor (FCTh) with (14) separated from each other by trenches (10), means of control which make possible a constricton of the current-carrying channel over the entire depth of the cathode finger (14) and at the same time do not increase or do not substantially increase the ON resistance of the component are additionally provided in the region of the trench walls (9).
In an exemplary embodiment, a p-doped wall layers (4), which have a reduced doping concentration compared with the gate regions (8) on the trench floors are introduced into the trench walls (9) as means.
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Patents Abstracts of Japan, vol. 7, No. 13 (E-153)[22258 Jan. 19, 1983, & JP, A, 57172765 (Handoutai Kenkiyuu Shinkoukai) 23, Oktober 1982, siehe Zusammenfassung; FIG. 1.
Patents Abstracts of Japan, vol. 7, No. 136 (E-181)[1281] Jun. 14, 1983, & JP A, 5850775 (Mitsubishi Denki K.K.) 25, Marz 1983, siehe Zusammenfassung; Figuren 2, 4.
Patents Abstracts of Japan, vol. 7, No. 17 (E-154)[1162] Jan. 22, 1982, siehe Zusammenfassung; figuren 1,2.
BBC Brown Boveri AG.
Clawson Joseph E.
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