Gate-switching charge-pump implemented inside a phase locked loo

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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Details

327537, 327437, 327157, H03L 7089, G05F 316

Patent

active

058182870

ABSTRACT:
A charge pump comprising a first branch PMOS FET having a source connected to a voltage source and a drain connected to an output node, a second branch NMOS FET having a drain connected to the output node and a source connected to a ground node, first apparatus for selectively switching a gate of the PMOS FET between its source and a first bias voltage source, and second apparatus for selectively switching a gate of the NMOS FET between its source and a second bias voltage source, the bias voltages being of magnitudes such that the first branch PMOS FET and second branch NMOS FET will source and sink the same magnitude of current when the FETs are fully conducting.

REFERENCES:
patent: 4612466 (1986-09-01), Stewart
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patent: 5153530 (1992-10-01), Takagi et al.
patent: 5285483 (1994-02-01), Ogawa et al.
patent: 5293082 (1994-03-01), Bathaee
patent: 5339050 (1994-08-01), Llewellyn
patent: 5362990 (1994-11-01), Alvarez et al.
patent: 5453680 (1995-09-01), Giolma et al.

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