Gate structure of a semiconductor device having an air gap

Details Gate structure of a semiconductor device having an air gap Gate structure of a semiconductor device having an air gap

1998-04-07

2000-05-16

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257412, 257413, H01L 2900

Patent

active

06064107&

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a source/drain region formed in the substrate, a gate oxide layer on the substrate between the source/drain region, a conductive layer on the gate oxide layer, a spacer around a side wall of the gate, and an air gap between the gate and the spacer. The spacer is not directly connected with the gate. The air gap is formed between the gate and the spacer.

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