Gate structure for an integrated circuit comprising elements of

Details Gate structure for an integrated circuit comprising elements of Gate structure for an integrated circuit comprising elements of

1983-09-12

1987-09-22

Edlow, Martin H.

357 236, 357 2314, H01L 2978

Patent

active

046958606

ABSTRACT:
A gate structure for integrated circuits and more especially for photosensitive charge-transfer devices comprises elements of the gate-insulator-semiconductor type. The gate structure is constituted by a thin film-layer of transparent or semi-transparent conductive material covered with a layer of compatible insulating material having a refractive index higher than 1.5.

REFERENCES:
patent: 4201798 (1980-05-01), Lindmayer
patent: 4451841 (1984-03-01), Hori
Wen et al., "A Review of CCD Imaging Technology", Solid State Tech., Sep. 1976, pp. 83-86.
Thompson et al. "Time Delay . . . CCD's Using Tin Oxide Gate Technology", IEEE Trans. on Elec. Dev., vol. ED-25, No. 2, Feb. 1978, pp. 132-134.
"Electronic Pictures from Charge-Coupled Devices", NASA Tech. Briefs, vol. 4, No. 1, Spring 1979, pp. 17-18.
Patents Abstracts of Japan, v. 4 #175 (E-36) [657], Dec. 3, 1980, Tokyo.

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