Gate structure for a MOS FET

Details Gate structure for a MOS FET Gate structure for a MOS FET

1987-03-16

1990-05-08

Wojciechowicz, Edward J.

357 231, 357 59, 357 67, 357 71, H01L 2978

Patent

active

049242814

ABSTRACT:
A gate structure of a MOS FET has an oxide layer and an electrode layer sequentially formed on a silicon substrate. In the gate structure, the electrode layer includes a first silicidized high-melting metal layer formed on the oxide layer, a high-melting metal layer formed on the first silicidized high-melting metal layer and a second silicidized high-melting metal layer formed on the high-melting metal layer.

REFERENCES:
patent: 4263058 (1981-04-01), Brown et al.
patent: 4337476 (1982-06-01), Fraser
patent: 4485550 (1984-12-01), Koeneke et al.
patent: 4581627 (1986-04-01), Ueda et al.
Murarka et al.--IEEE Jour. Solid-State Circuits, vol. SC-15, No. 4, Aug. 1980, "Refractory Silicides of titanium and Tantalum for Low-Resistivity Gates and Intercorrects".

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