Gate stack structure of a field effect transistor

Details Gate stack structure of a field effect transistor Gate stack structure of a field effect transistor

1997-01-16

1997-10-14

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257752, 257900, 257903, 257915, 437187, 437235, 437236, 313512, 313306, 313309, H01C 2900, H01C 2144, H01J 162

Patent

active

056775636

ABSTRACT:
A semiconductor structure comprising two gate stacks of equal height but different composition. The two gate stacks each comprise two layers, with the first layer of each gate stack comprising the same material and the second layer of each gate stack comprising a different material. Each gate stack has an upper surface a distance `X` above the upper planar surface of a substrate of the semiconductor structure. Thus, the two gate stacks of different composition are of identical height.

REFERENCES:
patent: 4564854 (1986-01-01), Ogura
patent: 4922311 (1990-05-01), Lee et al.
patent: 5087584 (1992-02-01), Wada et al.
patent: 5308783 (1994-05-01), Krautschneider et al.
patent: 5541427 (1996-07-01), Chappell et al.

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