Gate-source protective circuit for a power MOSFET

Details Gate-source protective circuit for a power MOSFET Gate-source protective circuit for a power MOSFET

1989-07-20

1992-12-15

DeBoer, Todd E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

361 91, 361111, H02H 904

Patent

active

051722909

ABSTRACT:
The gate-source capacitance of a power MOSFET (1) can be protected against positive and negative excess voltages by two integrated Zener diodes (3, 4) the anodes of which are coupled to each other and the cathodes of which are respectively coupled to the gate and source terminals of the power MOSFET. However, when a control voltage is applied, the parasitic bipolar transistor associated with one of the Zener diodes is switched on and prevents the MOSFET from completely switching on. The parasitic bipolar transistor is rendered harmless by the fact that the anode terminal is coupled to a source terminal (S) MOSFET (1) when a gate-source voltage is applied.

REFERENCES:
patent: 4160923 (1979-07-01), Maeda et al.
patent: 4777518 (1988-10-01), Mihara et al.
patent: 4829344 (1989-05-01), Bartoffi et al.
"Untersuchungen An Einem Neuen Mosfet-Modul", Lorenz et al., 3rd Int. Macroelectronics Conference, Munich, Nov. 13, 1986, pp. 68-84.

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