Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2007-06-29
2009-06-23
Porta, David P. (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C250S370090
Reexamination Certificate
active
07550735
ABSTRACT:
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
REFERENCES:
patent: 6255708 (2001-07-01), Sudharsanan et al.
patent: 6645787 (2003-11-01), Nemirovsky et al.
patent: 2007/0036700 (2007-02-01), Redden et al.
patent: 2007/0099359 (2007-05-01), Klimov et al.
patent: 2007/0276455 (2007-11-01), Fiset
Pal et al., “Deep level transient spectroscopy of anisotropic semiconductor GaTe”, Bull. Mater. Sci., vol. 17, No. 4, Aug. 1994, pp. 347.
Aydinli et al. “Anharmonicity in GaTe layered crystals”, Crystal Research and Technology, vol. 37, Sep. 18, 2002, pp. 1303-1309.
Burger Arnold
Mandal Krishna C.
Payne Stephen A.
Lawrence Livermore National Security LLC
Lee John H.
Porta David P.
Vu Mindy
Wooldridge John P.
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