Gate protection for a MOSFET

Details Gate protection for a MOSFET Gate protection for a MOSFET

1984-06-18

1986-10-07

Edlow, Martin H.

357 86, 357 49, 357 47, 357 42, H01L 2978

Patent

active

046162437

ABSTRACT:
This invention relates to a protection device of a semiconductor device. The present invention can prevent the drop of a gate breakdown voltage due to miniaturization of a device without impeding the high speed performance of the circuit attached thereto. The invention improves the voltage that can be applied to the input terminal of the device by reducing the surface breakdown voltage of a surface breakdown type MOS transistor, which is a principal member of a protection device, and reducing the resistance after the breakdown. This can be accomplished, for example, by increasing the concentration of a region in which the MOS transistor is disposed, by reducing the depth of the region, and so forth.

REFERENCES:
patent: 3517280 (1970-06-01), Rosier
patent: 3673428 (1972-06-01), Athanas
patent: 3712995 (1973-01-01), Stuedel
patent: 3967295 (1976-06-01), Stewart
patent: 4131908 (1978-12-01), Daub et al.
patent: 4152717 (1979-05-01), Satou et al.
patent: 4489340 (1984-12-01), Ueda et al.
patent: 4509069 (1985-04-01), Stoisiek

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