Gate oxide film structure for a solid state image pick-up...

Details Gate oxide film structure for a solid state image pick-up... Gate oxide film structure for a solid state image pick-up...

2008-07-22

2008-07-22

Prenty, Mark V. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000

Reexamination Certificate

active

11187937

ABSTRACT:
In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

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patent: 5699114 (1997-12-01), Park
patent: 6133595 (2000-10-01), Senda
patent: 6946694 (2005-09-01), Okamoto et al.
patent: HEI.6-151804 (1994-05-01), None
patent: HEI 11-45989 (1999-02-01), None
patent: 2000-286-407 (2000-10-01), None

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