Gate oxide film structure for a solid state image pick-up...

Details Gate oxide film structure for a solid state image pick-up... Gate oxide film structure for a solid state image pick-up...

2005-09-20

2005-09-20

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S233000, C257S249000, C257S411000

Reexamination Certificate

active

06946694

ABSTRACT:
In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

REFERENCES:
patent: 5581099 (1996-12-01), Kusaka et al.
patent: 5699114 (1997-12-01), Park

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