Gate oxide breakdown protection circuit for deep submicron proce

Details Gate oxide breakdown protection circuit for deep submicron proce Gate oxide breakdown protection circuit for deep submicron proce

1998-07-20

2000-06-27

Jackson, Stephen W.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific quantity comparison means

361 56, 361100, 361111, H02H 300

Patent

active

060814128

ABSTRACT:
An output driver prevents gate oxide breakdown and reverse charge leakage from a bus to the internal power supply. When the voltage on the bus exceeds the internal supply voltage or when the driver is powered down, a reference voltage generator provides intermediate voltages to prevent the development of excessive gate-source, gate-drain, and gate-backgate voltages in the driver. An upper protection circuit and a lower protection circuit multiplex the intermediate voltages to ensure driver protection and proper operation. A buffering circuit turns off a buffering transistor to block charge leakage to the internal power supply when the bus voltage is greater than the internal power supply voltage. A logic protection circuit prevents the bus voltage from appearing at the control terminal of the driver.

REFERENCES:
patent: 5555149 (1996-09-01), Wert et al.

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