Gate multiplexed low noise charge pump

Electric power conversion systems – Current conversion – With voltage multiplication means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

331 1A, 331 17, 331 25, 328155, 307511, H03L 700

Patent

active

051648890

ABSTRACT:
A charge pump having gate control voltages multiplexed to gates of FET driver circuits to precisely control charge injected by the charge pump to a low pass filter network. Large capacitors between the supply voltages and the respective gate control voltage derived from the particular supply voltage provide greater noise immunity which further reduces phase errors introduced by injected charge variations. The large capacitors help to hold the gate voltages constant, further controlling the injected charge.

REFERENCES:
patent: 5068626 (1991-11-01), Takagi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Gate multiplexed low noise charge pump does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate multiplexed low noise charge pump, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate multiplexed low noise charge pump will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1176661

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.