Gate input circuit for insulated gate field effect transistors

Details Gate input circuit for insulated gate field effect transistors Gate input circuit for insulated gate field effect transistors

1976-02-18

1977-03-08

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307202R, 307205, 307214, 307304, 361 54, 361 88, H03K 1760, H03K 1716, H02H 904

Patent

active

040114678

ABSTRACT:
In a gate input circuit for insulated gate field effect transistors, an insulated gate field effect transistor of depletion type is used, whose drain electrode (or source electrode) is connected to one terminal of a power source and whose source electrode (or drain electrode) is short-circuited with the gate electrode and connected to an input terminal of the gate input circuit through a resistor.

REFERENCES:
patent: 3395290 (1968-07-01), Farina et al.
patent: 3555374 (1971-01-01), Usuda
patent: 3588525 (1971-06-01), Hatsukano et al.
patent: 3636385 (1972-01-01), Koepp
patent: 3934159 (1976-01-01), Nomiya et al.
patent: 3947727 (1976-03-01), Stewart

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