Gate fabrication method for MNOS memory devices

Details Gate fabrication method for MNOS memory devices Gate fabrication method for MNOS memory devices

1976-10-19

1978-07-04

Kendall, Ralph S.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427248A, 427378, 427314, 357 23, B05D 512, H01L 2978

Patent

active

040989240

ABSTRACT:
An improved method for growing the silicon oxide memory insulator of an MNOS memory transistor is disclosed. The oxide is grown by passing a mixture of inert gas and anhydrous HCL over the substrate while the temperature is maintained within a predetermined range.

REFERENCES:
patent: 3647535 (1972-03-01), Naber
patent: 3692571 (1972-09-01), Colton et al.
patent: 3719866 (1973-03-01), Naber et al.

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