Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2007-02-15
2010-11-30
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S412000, C257SE29130, C257SE29255
Reexamination Certificate
active
07842977
ABSTRACT:
A gate electrode structure comprises at least one bi-layer, wherein each bi-layer comprises a plating film and a stress amplifier film. The plating film includes a poly-crystalline material. The stress amplifier film determines the crystallization result of the poly-crystalline material, wherein a mechanical stress induced through the plating layer is amplified. Tensile or compressive strain may be induced in a crystalline substrate. Electron or hole mobility may be increased and on-resistance characteristics of a MOS field effect transistor may be improved.
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Hecht Thomas
Jakschik Stefan
Chi Suberr
Edell Shapiro & Finnan LLC
Qimonda AG
Vu David
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