Gate electrode for MNOS semiconductor memory device

Details Gate electrode for MNOS semiconductor memory device Gate electrode for MNOS semiconductor memory device

1977-08-05

1979-04-24

Edlow, Martin H.

Static information storage and retrieval

Magnetic bubbles

Guide structure

29571, 357 54, 357 59, 357 65, 365182, H01L 2978

Patent

active

041515374

ABSTRACT:
Optimized switching and retention characteristics of an MNOS memory device are obtained by using as a gate electrode material either metals or semi-metals having a high work function, in conjunction with a gate dielectric layer having a low density of trapping states throughout its volume. The preferred gate electrode materials are either titanium or p.sup.+ -doped polycrystalline silicon.

REFERENCES:
patent: 3853496 (1974-12-01), Kim
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 3967981 (1976-07-01), Yamazaki

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