Gate driver output stage with bias circuit for high and wide...

Details Gate driver output stage with bias circuit for high and wide... Gate driver output stage with bias circuit for high and wide...

2007-11-06

2007-11-06

Le, Dinh T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S434000

Reexamination Certificate

active

11130370

ABSTRACT:
A simple, low cost, gate driver and bias circuit provides for a wider operating voltage range exceeding the normal component breakdown voltage of components such as NMOS and PMOS transistors. A CMOS process with an epitaxial layer as bulk and p-type substrate is used to implement the circuit in this example.

REFERENCES:
patent: 5717345 (1998-02-01), Yokomizo et al.
patent: 5886570 (1999-03-01), Brokaw
patent: 6605973 (2003-08-01), Chih
patent: 6713993 (2004-03-01), Descombes
patent: 6777991 (2004-08-01), Murakami

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