Gate drive technique for a bidirectional blocking lateral MOSFET

Details Gate drive technique for a bidirectional blocking lateral MOSFET Gate drive technique for a bidirectional blocking lateral MOSFET

1993-11-30

1996-04-23

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327365, 327584, H03K 17687

Patent

active

055107478

ABSTRACT:
A gate drive circuit for a bidirectional blocking MOSFET, the bidirectional blocking MOSFET being characterized in the source region is not shorted to the body region. In one embodiment, the gate drive circuit includes diodes connected between the source/drain regions and a charge pump, the charge pump generating a gate drive voltage applied to a gate of the bidirectional blocking MOSFET. In a second embodiment, a charge pump generates a gate drive voltage which is applied to the gate of the bidirectional blocking MOSFET, and is also connected to the source/drain regions through zener diodes. In the second embodiment, the potential applied to the gate of the bidirectional blocking MOSFET is limited to a zener diode drop above the lower of the voltages of the source/drain regions. In a fourth embodiment, a charge pump generates a floating gate drive voltage which is applied to gate of the bidirectional blocking MOSFET through first and second depletion mode MOSFETS. In the fourth embodiment, the gate drive voltage is limited to the threshold level of the first and second depletion mode MOSFETs and the voltage present on the more negative of the source/drain regions. In the second and fourth embodiments, the limited gate drive allows for a minimal gate oxide thickness, thereby improving switch resistance.

REFERENCES:
patent: 4256978 (1981-03-01), Pinckaers
patent: 4404477 (1983-09-01), Chao
patent: 4487458 (1984-12-01), Janutka
patent: 4857984 (1989-08-01), Lucas
patent: 5039877 (1991-08-01), Chern

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