Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override
Reexamination Certificate
2011-03-29
2011-03-29
Donovan, Lincoln (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Signal transmission integrity or spurious noise override
C327S386000, C327S534000, C327S535000, C327S537000
Reexamination Certificate
active
07915944
ABSTRACT:
One embodiment is a gate drive circuitry for switching a semiconductor device having a non-isolated input, the gate drive circuitry having a first circuitry configured to turn-on the semiconductor device by imposing a current on a gate of the semiconductor device so as to forward bias an inherent parasitic diode of the semiconductor device. There is a second circuitry configured to turn-off the semiconductor device by imposing a current on the gate of the semiconductor device so as to reverse bias the parasitic diode of the semiconductor device wherein the first circuitry and the second circuitry are coupled to the semiconductor device respectively through a first switch and a second switch.
REFERENCES:
patent: 5532896 (1996-07-01), Coussens et al.
patent: 5696396 (1997-12-01), Tokura et al.
patent: 6392859 (2002-05-01), Ohshima
patent: 6515534 (2003-02-01), Dabral
patent: 6650520 (2003-11-01), He
patent: 6943611 (2005-09-01), Braun et al.
patent: 2005/0263800 (2005-12-01), Kwon et al.
patent: 2006/0098523 (2006-05-01), Takita et al.
patent: 2006/0278925 (2006-12-01), Yamaguchi
patent: 2008/0054984 (2008-03-01), Lee
patent: 2008/0265980 (2008-10-01), Reichl et al.
patent: 2009/0115253 (2009-05-01), Cassia et al.
patent: 2009/0261896 (2009-10-01), Tzu-Chien et al.
patent: 2010/0088534 (2010-04-01), Watanabe et al.
patent: 2010/0127690 (2010-05-01), Endo
patent: 10 2005 030 831 (2006-06-01), None
Kazuaki Mino, Simon Herold and J. W. Kolar; “A Gate Drive Circuit for Silicon Carbide JFET”; CH-8092 Zurich / Switzerland /Europe; 0-7803-7906-3/03/$17.00 02003 IEEE; On pp. 1162-1166.
Bjäorn Allebrand and Hans-Peter Nee; “Design of a Gate Drive Circuit for use with SiC JFETs”; http://www.ee.kth.se/php/modules/publications/reports/2002/IR-EE-EME—2002—018.pdf ; 4pages.
Domes D, Werner R, Hofmann W, Domes K and Kraub S ; “A New, Universal and Fast Switching Gate-Drive-Concept for SiC-JFETs based on Current Source Principle”; ISSN: 0275-9306; ISBN: 0-7803-9716-9 INSPEC Accession No. 9121978; Digital Object Identifier: 10.1109/PESC.2006.1712169; Current Version Published: Oct. 23, 2006; On pp. 1-6.
Beaupre Richard Alfred
Caiafa Antonio
Glaser John Stanley
Nasadoski Jeffrey Joseph
Sabate Juan Antonio
Asmus Scott J.
Donovan Lincoln
General Electric Company
Houston Adam D
LandOfFree
Gate drive circuitry for non-isolated gate semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gate drive circuitry for non-isolated gate semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate drive circuitry for non-isolated gate semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2658157