Gate drive circuit with reduced switching loss and noise

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override

Reexamination Certificate

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Details

C327S170000, C327S381000, C327S387000, C327S434000, C361S100000

Reexamination Certificate

active

07737761

ABSTRACT:
A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

REFERENCES:
patent: 6271709 (2001-08-01), Kimura et al.
patent: 2005/0146823 (2005-07-01), Sakata et al.
patent: 6-291631 (1994-10-01), None
patent: 10-32976 (1998-02-01), None
patent: 2000-83371 (2000-03-01), None
patent: 2000-228868 (2000-08-01), None
patent: 2001-245479 (2001-09-01), None
patent: 2001-1269875 (2001-10-01), None
patent: 2006-158185 (2006-06-01), None
International Search Report.
Hirofumi Irokawa et al., “Power Loss Limit Analysis Method for High Output-Power-Density Converters by a Pair of Si-Mosfet with SiC-SBD”, EDD-05-46, SPC-05-71, pp. 1-11.
International Search Report dated Dec. 25, 2007 (Two (2) pages).
International Preliminary Report dated Apr. 22, 2009 with translation of the Written Opinion of the International Searching Authority (Six (6) pages).

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