Gate drive circuit, which makes the gate-charge flow back to...

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S440000

Reexamination Certificate

active

06967520

ABSTRACT:
A gate driving circuit having: a direct current power source; a driving signal source for outputting signal; a main switch device, having a gate terminal in which the signal outputted from the driving signal source is inputted, for controlling a conduction state between a source terminal and a drain terminal; a load energized when the conduction state between the source and drain terminals becomes a conductive state; a reverse current blocking unit, connected between the driving signal source and the gate terminal; and a regenerative unit, connected between the gate terminal and a high potential side of the power source, which becomes a conductive state when the conduction state between the source and drain terminals is a non-conductive state. A gate-source threshold voltage to obtain the conductive state between the source and drain terminals is set higher than an output voltage of the power source.

REFERENCES:
patent: 3641424 (1972-02-01), Kuykendall
patent: 3654518 (1972-04-01), Phelps et al.
patent: 4481434 (1984-11-01), Janutka
patent: 4605865 (1986-08-01), Yuzurihara
patent: 4709316 (1987-11-01), Ngo et al.
patent: 4894568 (1990-01-01), Pavlin
patent: 5140201 (1992-08-01), Uenishi
patent: 5264736 (1993-11-01), Jacobson
patent: 5298797 (1994-03-01), Redl
patent: 5315533 (1994-05-01), Stich et al.
patent: 5347164 (1994-09-01), Yeh
patent: 5424937 (1995-06-01), Iyotani et al.
patent: 5455757 (1995-10-01), Nguyen et al.
patent: 5467047 (1995-11-01), Robb
patent: 5660643 (1997-08-01), Toggweiler
patent: 5737208 (1998-04-01), Chen
patent: 6093885 (2000-07-01), Takehara et al.
patent: 6556396 (2003-04-01), Takehara et al.
patent: 6731023 (2004-05-01), Rothleitner et al.
patent: 2001/0040453 (2001-11-01), Toyomura et al.
patent: 3-36332 (1991-05-01), None
patent: 5-344708 (1993-12-01), None
patent: 2002-158021 (2002-05-01), None
C. Ong, et al., “A Mathematical Model For Power Mosfet Capacitances,” Proceedings of the Annual Power Electronics Specialists Conference, Conf. 22, Jun. 24, 1991, pp. 423-429.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Gate drive circuit, which makes the gate-charge flow back to... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate drive circuit, which makes the gate-charge flow back to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate drive circuit, which makes the gate-charge flow back to... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3451759

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.